Intel's new storage chip 1,000 times faster than conventional memory

Intel with Micron has introduced a new kind of non-volatile data storage device which is denser, tougher and faster than the modern memory

Washington: Intel with Micron has introduced a new kind of non-volatile data storage device which is denser, tougher and faster than the modern memory.

According to the Engadget, the chip called 3D XPoint forgoes traditional transistors that make up the core of modern flash memory. In its place, the material that makes up each Xpoint memory cell changes its physical properties to either have a high or low electrical resistance, which represents 1's and 0's respectively.

The multiple layers of these cells are stacked in a 3D crosshatch pattern that allows each cell to be addressed and rewritten individually

Intel claims that the new chip can perform 1000 times faster than conventional NAND and last hundreds of times longer before breaking down. The crosshatch design also allows Intel to stack the layers 10 times more densely than regular NAND.

Mark Adams, president of Micron, said in a statement that one of the most significant hurdles in modern computing is the time it takes the processor to reach data on long-term storage. He also said that this new class of non-volatile memory is a revolutionary technology that allows for quick access to enormous data sets and enables entirely new applications.

The chips at first may help speed up big data applications like fraud detection, real-time data analysis and disease tracking. The Xpoints are supposedly already in production.

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